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Oxide 掺镁计量比铌酸锂晶体棱镜MgSLN Prism (太赫兹发生核心器件)【推荐】产地日本

Oxide 掺镁计量比铌酸锂晶体棱镜MgSLN Prism (太赫兹发生核心器件)【推荐】产地日本

MgSLN Prism 9x9x9mm/ 10x10x12.5mm
-MgSLN Prism -Key Device for THz Generation


特点:
  • l Easy setup for THz Generation
  • l Wide THz bandwidth(0.2~2.5 THz)
  • l Low Defect Density
  • l High damage threshold
  • l 产地日本Oxide Corporation.


产品选型
Standard Type1(Basic)



Size9x9x9mm
AR coat@780-820nm and @1025-1065nm



Strandard Type2(High Power)
Better performances at high average input power due to the residual power dumped outside of the prism.



Size10x10x12.5mm
AR coat@780-820nm and @1025-1065nm


详细图纸欢迎来电索取,瑞研科技0431-81976112


→MgSLN(掺镁计量比铌酸锂晶体)太赫兹晶体棱镜-9x9x9mm/ 10x10x12.5mm
应用:THz 产生器件;接受定制
点击查看datasheetMgSLN-Prism-for-THz-Generation.pdf



Application example references
Ref. 1: M. Nagai, M. Jewariya, Y. Ichikawa, H. Ohtake, T. Sugiura, Y. Uehara, and K. Tanaka, “Broadband and high power terahertz pulse generation beyond excitation bandwidth limitation via χ(2) cascaded processes in LiNbO3”, OPT. EXPRESS 18, 11543-11549 (2009).
 
Ref. 2: F. Blanchard, X. Ropagnol, H. Hafez, H. Razavipour, M. Bolduc, R. Morandotti, T. Ozaki, and D. G. Cooke, ” Effect of extreme pump pulse reshaping on intense terahertz emission in lithium niobate at multimilliJoule pump energies”, OPT. LETT. 39, 4333-4336 (2014).

 


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